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IPSH4N03LAG

MOSFET N-KANAL POWER MOS

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SeekIC No. : 00160480 Detail

IPSH4N03LAG: MOSFET N-KANAL POWER MOS

IPSH4N03LAG Data Sheet

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Part Number:
IPSH4N03LAG
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 7.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Packaging : Tube
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 7.6 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 2) 90 A
T C=100 77
Pulsed drain current I D,pulse T C=25 3) 360
Avalanche energy, single pulse E AS I D=90 A, R GS=25 150 mJ
Reverse diode dv /dt dv /dt I D=90 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 		6 kV/s
Gate source voltage4) V GS ±20 V
Power dissipation P tot T C=25 94 W
Operating and storage temperature T j, T stg -55 ... 175
IEC climatic category; DIN IEC 68-1 55/175/56
2) Current is limited by bondwire; with an RthJC=1.6 K/W the chip is able to carry 109 A.
3) See figure 3
4) T j,max=150 and duty cycle D<0.25 for V GS<-5 V


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